Laser action in Eu-doped GaN thin-film cavity at room temperature

Park, J.H.; Steckl, A.J.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4588
Academic Journal
Rare-earth-based lasing action in GaN is demonstrated. Room-temperature stimulated emission (SE) was obtained at 620 nm from an optical cavity formed by growing in situ Eu-doped GaN thin films on sapphire substrates. The SE threshold for optical pumping of a ∼1 at. % Eu-doped GaN sample was ∼10 kW/cm². The SE threshold was accompanied by reductions in the emission linewidth and lifetime. A modal gain of ∼43 cm-1 and a modal loss of ∼20 cm-1 were obtained.


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