Reduction of contact resistance in pentacene thin-film transistors by direct carrier injection into a-few-molecular-layer channel

Yoneya, Nobuhide; Noda, Makoto; Nirai, Nobukazu; Nomoto, Kazumasa; Wada, Masaru; Kasahara, Jiro
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4663
Academic Journal
We found an abrupt reduction of contact resistance, Rc, in pentacene bottom-contact thin-film transistors (TFT's) with Au/Ti source/drain (S/D) electrodes when Ti thickness is below ∼3 nm. Our results suggest that the direct ohmic contact with a few molecular layer channel is a key to reduce the Rc of the S/D electrodes. We propose a Au/self-assembled monolayer electrode structure enabling direct ohmic contact with these few molecular layer channels, and achieved high-performance bottom-contact TFTs with an extrinsic mobility of 1.1 cm²/V s, an on/off ratio of 106, and a subthreshold swing of 0.3 V/decade.


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