Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N

Zhu, K.; Nakarmi, M.L.; Kim, K.H.; Lin, J.Y.; Jiang, H.X.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4669
Academic Journal
Highly conductive Si-doped n-type Al0.7Ga0.3N alloys were grown by metalorganic chemical vapor deposition on sapphire substrates. Variable temperature Hall-effect measurements have been employed to study the electrical properties for samples with nominal Si dopant concentration (NSi) from 2.6 to 6.8 × 1019 cm³. For the sample with NSi=6.0 × 1019 cm³, we have achieved n-type resistivity of 0.0075 Ω cm with an electron concentration of 3.3 × 1019 cm³ and mobility of 25 cm²/V s at room temperature. For the same sample, the effective donor (Si) activation energy E0 was determined to he as low as 10 meV. E0 increases to 25 meV as NSi is reduced to 2.6 × 1019 cm³, which can be explained by the handgap renormalization effect. This implies that heavy doping is necessary in high-Al-content AlGaN alloys to bring down the donor activation energy, therefore a higher conductivity.


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