TITLE

Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)

AUTHOR(S)
Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4672
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm² V-1 s-1 and 1.75 × 1015 cm³ at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm² V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼250 meV).
ACCESSION #
15075062

 

Related Articles

  • Current Carriers Transport In High Uniaxially Strained Silicon. Kolomoets, V. V.; Baidakov, V. V.; Fedosov, A. V.; Gorin, A. E.; Ermakov, V. M.; Korbutyak, D. V.; Liarokapis, E.; Gromova, G. V.; Orasgulyev, B. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p55 

    We present the tensoresistivity effects which demonstrate the pressure-induced increase of the mobility of electrons and holes at certain orientations of uniaxial pressure X with reference to the [100] crystallographic axis. The uniaxially strained channels occur in silicon n-MOS-transistors and...

  • Current collapse in AlGaN/GaN transistors studied using time-resolved Raman thermography. Simms, R. J. T.; Pomeroy, J. W.; Uren, M. J.; Martin, T.; Kuball, M. // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p203510 

    Current collapse in AlGaN/GaN high electron mobility transistors was investigated using time-resolved Raman thermography. The virtual-gate mechanism was visualized by changes in the device temperature distribution, illustrating an effective gate lengthening up to 0.6 um. Two devices with...

  • Effects of nitrogen in Stone-Wales defect on the electronic transport of carbon nanotube. Wei, Jianwei; Hu, Huifang; Zeng, Hui; Wang, Zhiyong; Wang, Lei; Peng, Ping // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p092121 

    The effects of nitrogen substitutional doping in Stone-Wales (SW) defect on the transport properties of single-walled nanotubes are simulated by using density functional theory and nonequilibrium Green’s functions. It is found that the nitrogen in SW produces half-filled band near the...

  • The Doping Effect on the Lattices and Electronic Structure in Superconducting Fe-based Compounds Sr1− xK xFe2As2. Min Pan; Zheng Huang; Huan Feng Ma; Ya Jing Cui; Xin Sheng Yang; Yong Zhao // Journal of Superconductivity & Novel Magnetism;Aug2010, Vol. 23 Issue 6, p985 

    The lattices and density of states (DOS) for the novel superconductor Sr1− xK xFe2As2 ( x=0–1) are calculated based on the density functional theory with the scheme of the linearized augmented plane wave and the improved local orbital (APW+ lo). The effects of K-doping on the...

  • Ti Kα radiography of Cu-doped plastic microshell implosions via spherically bent crystal imaging. King, J. A.; Akli, K.; Zhang, B.; Freeman, R. R.; Key, M. H.; Chen, C. D.; Hatchett, S. P.; Koch, J. A.; MacKinnon, A. J.; Patel, P. K.; Snavely, R.; Town, R. P. J.; Borghesi, M.; Romagnani, L.; Zepf, M.; Cowan, T.; Habara, H.; Kodama, R.; Toyama, Y.; Karsch, S. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191501 

    We show that short pulse laser generated Ti Kα radiation can be used effectively as a backlighter for radiographic imaging. This method of x-ray radiography features high temporal and spatial resolution, high signal to noise ratio, and monochromatic imaging. We present here the Ti Kα...

  • Optical Band Gap of a New Filled Tetrahedral Semiconductor Li3AlN2. Kushida, K.; Kaneko, Y.; Kuriyama, K. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p289 

    Li3AlN2 can be viewed as the assemblage of eight hypothetical zincblende AlN lattices (Li0.5Al0.5N)- partially filled with He-like Li+ interstitials, leading to a new type of “filled tetrahedral semiconductor”. Optical absorption studies show that Li3AlN2 is likely to be a direct...

  • Activation of ion implanted Si in GaN using a dual AlN annealing cap. Hager, C. E.; Jones, K. A.; Derenge, M. A.; Zheleva, T. S. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    A dual annealing cap composed of a thin, low temperature metal-organic chemical vapor deposition (MOCVD) deposited AlN adhesion layer and a thicker, sputtered AlN film for added mechanical strength enabled us to anneal Si-implanted layers for 30 min at temperatures up to 1250 °C. At higher...

  • Electron transport and band structure in phosphorus-doped polycrystalline silicon films. Young, David L.; Branz, Howard M.; Liu, Fude; Reedy, Robert; To, Bobby; Wang, Qi // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    We study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism...

  • Parameters required to simulate electric characteristics of SiC devices for n-type 4H–SiC. Kagamihara, Sou; Matsuura, Hideharu; Hatakeyama, Tetsuo; Watanabe, Takatoshi; Kushibe, Mitsuhiro; Shinohe, Takashi; Arai, Kazuo // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5601 

    In order to obtain some of the parameters required to simulate the electric characteristics of silicon carbide (SiC) power electronic devices in a wide temperature range from startup temperatures (<=30 °C) to steady-operation temperatures (>=200 °C), we discuss the dependence of the two...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics