Electrical conduction properties of n-type Si-doped AlN with high electron mobility (>100 cm2 V-1 s-1)

Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4672
Academic Journal
For n-type Si-doped AlN, we have obtained an electron mobility and concentration of 125 cm² V-1 s-1 and 1.75 × 1015 cm³ at 300 K, respectively. At 250 K, the mobility reached the maximum of 141 cm² V-1s-1. To explain the temperature dependence of the mobility, we calculated mobilities limited by specific scattering mechanisms. We found that the mobility is limited by neutral impurity scattering rather than ionized impurity scattering or lattice scattering because of a large donor ionization energy (∼250 meV).


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