Doping of low-temperature GaAs and GaMnAs with carbon

Schott, G.M.; Rüster, C.; Brunner, K.; Gould, C.; Schmidt, G.; Molenkamp, L.W.; Sawicki, M.; Jakiela, R.; Barcz, A.; Karczewski, G.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4678
Academic Journal
The incorporation of carbon in low-temperature (LT) GaAs and GaMnAs layers deposited by molecular-beam epitaxy under various growth conditions has been investigated. The lattice parameter depends on Mn content, C content, and the growth conditions which strongly affect Mn, C, and point defect incorporation. We found optimum growth conditions (Tsub=270 °C, the beam equivalent pressure ratio is 5, growth rate is 0.1 nm/s) at which high-quality GaMnAs layers with moderate Mn content as well as LT-GaAs layers were dejxsited, which were efficiently p-doped by carbon. LT GaAs:C revealed the same electrical activation of carbon of about 50% at a high doping level p=5 × 1019 cm³ as observed in high-temperature GaAs:C. The Curie temperature as well as the saturation magnetization of GaMnAs decreases with C doping. This suggests a reduced amount of Mn contributing to the ferromagnetic phase in GaMnAs:C.


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