Microwave characterization of (Pb,La)TiO3 thin films integrated on ZrO2/SiO2/Si wafers by sol-gel techniques

Song, Z.T.; Wang, Y.; Chan, H.L.W.; Choy, C.L.; Feng, S.L.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4696
Academic Journal
Polycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO2/SiO2/Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network analyzer. A strong dependence of the dielectric constant of PLT films and, correspondingly, the resonance frequency of PLT-based interdigital capacitor on the sample preparation conditions were observed. They resulted from the structural transformation of PLT from a layered structure to a uniform film as the annealing temperature was raised from 550 to 700 ° C, suggesting a possible way to modify the device performance by controlling the layered structure of the ferroelectric film.


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