Film and interface layer properties of ultraviolet-ozone oxidized hafnia and zirconia gate dielectrics on silicon substrates

Chi, David; McIntyre, Paul C.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4699
Academic Journal
We report on the use of ultraviolet-ozone (UVO) oxidation of thin film hafnium and zirconium to fabricate high-dielectric constant (high-k) gate oxides with chemically modified silicon dioxide-based interface layers on silicon (100) substrates. Using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy, the oxidation state and thickness of the interfacial layer are characterized before and after UVO exposure. Reduction of the chemical oxide followed by reoxidation is observed. The reoxidized silicon is found to be substoichiometric. Thickness series fabricated by repeating the UVO process multiple times for the same substrate indicate a constant interface layer thickness. Inverse capacitance density versus physical thickness plots were used to determine that the dielectric constants for the UVO HfO2 and UVO ZrO2 are 17.3 and 24.8, respectively.


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