Raman study of Bi site-occupancy effect on orientation and polarization in Bi4Ti3O12 thin films

Yau, C.Y.; Palan, R.; Tran, K.; Buchanan, R.C.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4714
Academic Journal
Our Raman study of 0-6 mol % Bi excess Bi4Ti3O12 (BIT) films implies that symmetry breaking effect occurs in 0 mol % Bi excess film, which is restored to BIT symmetry in 2-6 mol % Bi excess films. The "rigid layer" mode at 59.22 cm-1 implies a higher stability of Bi in the Bi2O2, layer than the perovskite layer and that Bi has high preference to incorporate into the Bi2O2 layer. Increasing Bi incorporation in the A site enhances the Jahn-Teller distortion of TiO6 octahedra and the c orientation. This implies that doping by an ion without an outer orbital like La can decrease the TiO6 distortion, change the orientation, and tilt the polarization vector.


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