TITLE

Raman study of Bi site-occupancy effect on orientation and polarization in Bi4Ti3O12 thin films

AUTHOR(S)
Yau, C.Y.; Palan, R.; Tran, K.; Buchanan, R.C.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4714
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Our Raman study of 0-6 mol % Bi excess Bi4Ti3O12 (BIT) films implies that symmetry breaking effect occurs in 0 mol % Bi excess film, which is restored to BIT symmetry in 2-6 mol % Bi excess films. The "rigid layer" mode at 59.22 cm-1 implies a higher stability of Bi in the Bi2O2, layer than the perovskite layer and that Bi has high preference to incorporate into the Bi2O2 layer. Increasing Bi incorporation in the A site enhances the Jahn-Teller distortion of TiO6 octahedra and the c orientation. This implies that doping by an ion without an outer orbital like La can decrease the TiO6 distortion, change the orientation, and tilt the polarization vector.
ACCESSION #
15075048

 

Related Articles

  • Simulation of oxygen vacancy induced phenomena in ferroelectric thin films. Li, Kwok Tung; Lo, Veng Cheong // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034107 

    The role of oxygen vacancy in lead–titanate–zirconate ferroelectric thin film has been numerically simulated using the two-dimensional four-state Potts model. On one hand, the presence of an oxygen vacancy in a perovskite cell strongly influences the displacement of the Ti4+ ion....

  • Structural changes and ferroelectric properties of BiFeO3–PbTiO3 thin films grown via a chemical multilayer deposition method. Gupta, Shashaank; Garg, Ashish; Agrawal, Dinesh Chandra; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai // Journal of Applied Physics;Jan2009, Vol. 105 Issue 1, p014101 

    Thin films of (1-x)BiFeO3–xPbTiO3 (BF-xPT) with x≈0.60 were fabricated on Pt/Si substrates by chemical solution deposition of precursor BF and PT layers alternately in three different multilayer configurations. These multilayer deposited precursor films upon annealing at 700 °C...

  • Electric-pulse-induced reflectance change in the thin film of perovskite manganite. Aoyama, K.; Waku, K.; Asanuma, A.; Uesu, Y.; Katsufuji, T. // Applied Physics Letters;8/16/2004, Vol. 85 Issue 7, p1208 

    We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1-xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.

  • Ferroelectric behaviors and charge carriers in Nd-doped Bi4Ti3O12 thin films. Gao, X. S.; Xue, J. M.; Wang, J. // Journal of Applied Physics;2/1/2005, Vol. 97 Issue 3, p034101 

    Nd-doped Bi4Ti3O12 thin films, (Bi3.25Nd0.85)4Ti3O12, of layered perovskite structure were synthesized by rf sputtering, followed by postannealing at 600–700 °C. They show enhanced ferroelectricity with rising postannealing temperature in the range of 650–750 °C. When...

  • Preparation of CaCu3Ti4O12 thin films by chemical solution deposition. Wen Lu; Lixin Feng; Guanghan Cao; Zhengkuan Jiao // Journal of Materials Science;May2004, Vol. 39 Issue 10, p3523 

    Focuses on the preparation of perovskite thin films by chemical solution deposition. Advantage of the dielectric properties for microelectric applications; Origin of static dielectric constant; Applications of the perovskite compound in various experiments like doping in different lattice sites...

  • Effect of excess Pb in PbTiO3 precursors on ferroelectric and fatigue property of sol–gel derived PbTiO3/PbZr0.3Ti0.7O3/PbTiO3 thin films. Longhai Wang; Jun Yu; Yunbo Wang; Junxiong Gao // Journal of Materials Science: Materials in Electronics;Dec2008, Vol. 19 Issue 12, p1191 

    A series of Pb(1+ x)TiO3/PbZr0.3Ti0.7O3/Pb(1+ x)TiO3 (PTO/PZT/PTO) and PbZr0.3Ti0.7O3 (PZT) thin films were prepared by a sol–gel method. Different excess Pb content ( x) ( x = 0, 0.05, 0.10, 0.15, 0.20) were added to the PbTiO3 (PTO) precursors to investigate their effect on...

  • Microwave characterization of (Pb,La)TiO3 thin films integrated on ZrO2/SiO2/Si wafers by sol-gel techniques. Song, Z.T.; Wang, Y.; Chan, H.L.W.; Choy, C.L.; Feng, S.L. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4696 

    Polycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO2/SiO2/Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network...

  • Dielectric nonlinearity in relaxor and ferroelectric thin films of chemically ordered PbSc0.5Nb0.5O3. Tyunina, M.; Levoska, J. // Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4720 

    Dynamic nonlinear dielectric response of pulsed laser deposited epitaxial thin films of chemically ordered perovskite PbSc0.5Nb0.5O3 was experimentally studied and analyzed. Films deposited at 925 K exhibited relaxor-like behavior indicated by frequency dispersion of temperature of dielectric...

  • Dye-doped polymer microring laser coupled with stimulated resonant Raman scattering. Yanagi, Hisao; Takeaki, Rei; Tomita, Satoshi; Ishizumi, Atsushi; Sasaki, Fumio; Yamashita, Kenichi; Oe, Kunishige // Applied Physics Letters;7/20/2009, Vol. 95 Issue 3, p033306 

    Polymer ring laser was fabricated with 1,4-bis[2-[4-[N,N-di(p-totyl)amino]phenyl]vinyl]benzene (DADSB)-doped polyvinyl-pyrrolidone (PVP) thin films coated on an inner surface of a quartz microcapillary. Ring-waveguided multimode lasing was observed under pulsed optical pumping. With increasing...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics