TITLE

Effects of denuded zone of Si(111) surface on current conduction and charge trapping of HfOxNy gate dielectric in metal-oxide-semiconductor devices

AUTHOR(S)
Chin-Lung Cheng; Kuei-Shu chang-Liao; Ching-Hung Huang; Tien-Ko Wang
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4723
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work investigated the effects of interstitial oxygen [Oi] defects at the Si(111) surface on current conduction and charge trapping of metal-oxide-simiconductor devices with HfOxNx gate dielectric. Smaller gate leakage current, stress-induced leakage current (SILC) and defect generation rate, attributable to the decrease of [Oi] defect concentration at the HfOxNx/Si interface, were observed for devices with denuded zone. The current-conduction mechanism of the HfOxNx films at the low- and high-electrical field was dominated by the Schottky and Frenkel-Poole emissions, respectively. The trapped charges in HfOxNx dielectric were positive. The mechanism related to the SILC at low-electrical field can he explained using the interface trap-assisted tunneling.
ACCESSION #
15075045

 

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