Single-crystalline tin-doped indium oxide whiskers: Synthesis and characterization

Wan, Q.; Song, Z. T.; Feng, S. L.; Wang, T. H.
November 2004
Applied Physics Letters;11/15/2004, Vol. 85 Issue 20, p4759
Academic Journal
An in situ doping approach was adopted to synthesize single-crystalline Sn-doped In2O3 [indium tin oxide (ITO)] nanowhiskers. Similar synthesis strategy could be used in the production of various doped metal oxide nanowhiskers. The growth mode of ITO nanowhiskers was discussed based on a self-catalytic vapor-liquid-solid growth mechanism. At room temperature, a photoluminescence peak at 510 nm was observed, which was likely related to the surface defects of ITO nanowhiskers. In air ambient, the resistivity of individual ITO whisker was measured to be 0.40 Ω cm, which was much higher than that of ITO films. A possible explanation for the high resistivity was proposed based on the influence of surface oxygen absorption.


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