Pulsed laser deposition of zirconium silicate thin films as candidate gate dielectrics

Zhu, M.; Zhu, J.; Liu, J.M.; Liu, Z.G.
January 2005
Applied Physics A: Materials Science & Processing;2005, Vol. 80 Issue 1, p135
Academic Journal
Thin films of zirconium silicate ZrxSi1-xO2 (with x = 0.69), a material that has been suggested as a possible high-k dielectric, are deposited on silicon wafers by pulsed laser deposition (PLD) under different deposition and post-annealing conditions. The morphology and electrical properties of these films are characterized. It is shown that the films re- main amorphous after an ex situ rapid thermal annealing (RTA) at temperatures as high as 800 °C. For the ∼6 nm thick film deposited at 300 °C in an O2 ambient with a N2 ambient post-RTA at 500 °C for 5 mm, the equivalent oxide thickness (EOT) is ∼1.9 nm, as evaluated from capacitance-voltage (C-V) measurements. The samples prepared with the N2 ambient post-RTA show a slightly higher leakage current than that for samples annealed in the O2 ambient. For the films deposited in N2, the smallest EOT of ∼1.1 nm is obtained, and the films have fair electrical properties in spite of the high interface state density and relatively higher leakage.


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