TITLE

Monitoring lithography product data for real-time focus control

AUTHOR(S)
Peters, Kurt M.; Creighton, Michael
PUB. DATE
November 2004
SOURCE
Microlithography World;Nov2004, Vol. 13 Issue 4, p22
SOURCE TYPE
Trade Publication
DOC. TYPE
Article
ABSTRACT
The difference between the width of the bottom of an isolated resist line and the width of the top can be extracted from CD-SEM data and used as a focus monitor metric. This facilitates real-time on-product focus control and the prompt identification of aberration and illumination drifts without reducing throughput.
ACCESSION #
15026940

 

Related Articles

  • Standard sample probes for characterizing optical apertures in near-field scanning optical microscopy. Imhof, Joseph M.; Kwak, Eun-Soo; Vanden Bout, David A. // Review of Scientific Instruments;Apr2003, Vol. 74 Issue 4, p2424 

    A quick, cost effective, semiquantitative means for gauging the quality of near-field scanning optical microscopy (NSOM) probe apertures has been demonstrated by employing a nanoperforated thin metal film standard sample. Small 182 nm holes were created by evaporating gold over dispersed latex...

  • Imaging Catastrophic Optical Mirror Damage in High-Power Diode Lasers. Ziegler, Mathias; Tomm, Jens W.; Zeimer, Ute; Elsaesser, Thomas // Journal of Electronic Materials;Jun2010, Vol. 39 Issue 6, p709 

    We image catastrophic optical mirror damage (COMD) in red- and infrared-emitting high-power broad-area diode lasers by combining highly COMD-selective thermography, near-field imaging, scanning electron microscopy, and cathodoluminescence. All techniques exhibit strong correlations in terms of...

  • Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. Flessa, Aikaterini; Ntemou, Eleni; Kokkoris, Michael; Liarokapis, Efthymios; Gloginjić, Marko; Petrović, Srdjan; Erich, Marko; Fazinić, Stjepko; Karlušić, Marko; Tomić, Kristina // Journal of Raman Spectroscopy;Aug2019, Vol. 50 Issue 8, p1186 

    A 6H‐SiC single crystal implanted in channeling mode by 4‐MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro‐Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create...

  • Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and... Hill, C. J.; Bridger, P. M.; Picus, G.S.; McGill, T.C. // Applied Physics Letters;12/20/1999, Vol. 75 Issue 25, p4022 

    Presents a study that compared theories and experiments on scanning apertureless microscopy below the diffraction limit. Debate on the exact nature of the signal in scanning apertureless microscopy techniques; Simulations and experiments on the apertureless microscopy structure; Simulations of...

  • Development of Nanohole Array Patterned by Laser Interference Lithography Technique. Srisuai, N.; Horprathum, M.; Eiamchai, P.; Chindaudom, P.; Boonruang, S.; Denchitcharoen, S. // Key Engineering Materials;2016, Vol. 675/676, p41 

    Periodic nanohole pattern was created in spin-coated photoresist S1805 on Si substrates by Laser Interference Lithography (LIL). Wavelength of a laser source used in the optical system is 442 nm with the photon energy 2.80 eV. The system was set up to employ two laser beams from a beam splitter...

  • High-quality CdS nanoribbons with lasing cavity. Liu, Y. K.; Zapien, J. A.; Geng, C. Y.; Shan, Y. Y.; Lee, C. S.; Lifshitz, Y.; Lee, S. T. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3241 

    High-density and high-quality CdS nanoribbons were synthesized by a thermal evaporation process. The nanoribbons were characterized by scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. CdS nanoribbons were found to be single...

  • High-resolution characterization of multiferroic heterojunction using aberration-corrected scanning transmission electron microscopy. Zhoushen Yuan; Jieji Ruan; Lin Xie; Xiaoqing Pan; Di Wu; Peng Wang // Applied Physics Letters;4/24/2017, Vol. 110 Issue 17, p1 

    Multiferroic tunnel junctions have been considered as potential candidates for nonvolatile memory devices. Understanding the atomic structure at the interface is crucial for optimizing the performances in such oxide electronics. Spatially resolved electron energy loss spectroscopy (EELS)...

  • Spatially resolved electrical characterization of a YBa[sub 2]Cu[sub 3]O[sub 7-delta] flux.... Husemann, K.-D.; Gross, R.; Huebener, R.P.; Roas, B. // Applied Physics Letters;5/31/1993, Vol. 62 Issue 22, p2871 

    Examines the transport properties of YBa[sub 2]Cu[sub 3]O[sub 7-delta] flux transformer using scanning electron microscopy. Application of SrTiO[sub 3] that serves as an insulator adapting the crossover technology; Masking of the layers via optical lithography; Evolution of a three-layer flux...

  • Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography. Yew, J. Y.; Chen, L. J.; Nakamura, K. // Applied Physics Letters;8/12/1996, Vol. 69 Issue 7, p999 

    Epitaxial growth of NiSi2 on (111)Si inside 0.1–0.6 μm oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy, and thin-film stress measurement. Striking effects of size and shape of deep...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics