MgZnO/AlGaN heterostructure light-emitting diodes

Osinsky, A.; Dong, J. W.; Kauser, M. Z.; Hertog, B.; Dabiran, A. M.; Chow, P. P.; Pearton, S. J.; Lopatiuk, O.; Chernyak, L.
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4272
Academic Journal
We report on p–n junction light-emitting diodes fabricated from MgZnO/ZnO/AlGaN/GaN triple heterostructures. Energy band diagrams of the light-emitting diode structure incorporating piezoelectric and spontaneous polarization fields were simulated, revealing a strong hole confinement near the n-ZnO/p-AlGaN interface with a hole sheet density as large as 1.82×1013 cm-2 for strained structures. The measured current–voltage (IV) characteristics of the triple heterostructure p–n junctions have rectifying characteristics with a turn-on voltage of ∼3.2 V. Electron-beam-induced current measurements confirmed the presence of a p–n junction located at the n-ZnO/p-AlGaN interface. Strong optical emission was observed at ∼390 nm as expected for excitonic optical transitions in these structures. Experimental spectral dependence of the photocurrent confirmed the excitonic origin of the optical transition at 390 nm. Light emission was measured up to 650 K, providing additional confirmation of the excitonic nature of the optical transitions in the devices.


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