Pressure-tuned InGaAsSb/AlGaAsSb diode laser with 700 nm tuning range

Adamiec, P.; Salhi, A.; Bohdan, R.; Bercha, A.; Dybala, F.; Trzeciakowski, W.; Rouillard, Y.; Joullié, A.
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4292
Academic Journal
InGaAsSb/AlGaAsSb type-I midinfrared diode lasers emitting continuous wave at 2.4 μm at room temperature have been studied under high hydrostatic pressure. When the pressure was increased up to 19 kbar, the threshold current varied from 240 to 400 A/cm2, showing a minimum of 200 A/cm2 close to 8 kbar, and the emission spectra shifted to shorter wavelengths by up to 700 nm (i.e., from 2.4 μm to 1.7 μm). This exceptional tuning range could be very useful in tunable diode laser absorption spectroscopy.


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