TITLE

Band-edge exciton states in AlN single crystals and epitaxial layers

AUTHOR(S)
Chen, L.; Skromme, B. J.; Dalmau, R. F.; Schlesser, R.; Sitar, Z.; Chen, C.; Sun, W.; Yang, J.; Khan, M. A.; Nakarmi, M. L.; Lin, J. Y.; Jiang, H.-X.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4334
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The band-edge excitonic properties of AlN are investigated using low-temperature (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations.
ACCESSION #
14974988

 

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