Defect passivation in multicrystalline silicon for solar cells

Tarasov, I.; Ostapenko, S.; Nakayashiki, K.; Rohatgi, A.
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4346
Academic Journal
We report on the effect of hydrogen passivation in ribbon multicrystalline silicon (mc-Si) wafers from SiNx:H anti-reflecting layer using simultaneous rapid thermal annealing of Al back-contact and SiNx anti-reflection coating on the front (RTP-Al/SiNx). Scanning room-temperature photoluminescence spectroscopy revealed a strong inhomogeneity in the increase of minority carrier lifetime caused by the hydrogen defect passivation in mc-Si. We present experimental evidence that RTP-Al/SiNx processing leads to strong lifetime enhancement caused by hydrogen defect passivation in low-lifetime regions of mc-Si wafers. Additional details on the hydrogenation mechanism are revealed in a course of the dehydrogenation study. Hydrogen out-diffusion shows a different rate or activation energy between high and low lifetime regions of the wafers.


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