Short-period superlattices of AlN/Al0.08Ga0.92N grown on AlN substrates

Nikishin, S. A.; Borisov, B. A.; Chandolu, A.; Kuryatkov, V. V.; Temkin, H.; Holtz, M.; Mokhov, E. N.; Makarov, Yu.; Helava, H.
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4355
Academic Journal
High-quality short-period superlattices of AlN/Al0.08Ga0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3×108 cm-2. Complete removal of residual Al2O3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al2O3 islands with the surface coverage as low as 0.2% results in increased dislocation density.


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