Structural and optical properties of GaN1-xAsx grown by metalorganic chemical vapor deposition

Tsuda, Yuhzoh; Mouri, Hirokazu; Yuasa, Takayuki; Taneya, Mototaka
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4361
Academic Journal
GaN-based GaN1-xAsx alloys, x≤0.043, were grown by metalorganic chemical vapor deposition. The results of high-resolution x-ray diffraction measurements indicated that no phase separation was observed over a range of up to x=0.043 and both the lattice constants c and a increased with an increase in arsenic composition. In cathodoluminescence measurements, the GaN1-xAsx showed a large band gap bowing parameter of 22.1 eV. Furthermore, we have experimentally revealed that the valence band offset for the GaN1-xAsx/GaN is very large, and we have proposed the band gap energy diagram of GaN1-xAsx utilizing an arsenic deep donor level.


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