Formation of metallic In in InGaN/GaN multiquantum wells

Daele, B. Van; Tendeloo, G. Van; Jacobs, K.; Moerman, I.; Leys, M. R.
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4379
Academic Journal
InxGa1-xN/GaN light-emitting diode structures with a high In concentration may lose all optical output after capping the active region with a p-type GaN layer. Transmission electron microscopy has been applied to determine the microstructural changes that occur in the quantum-well (QW) region during this capping process. The loss of the optical output is related to a clustering of In into metallic In platelets in the QW region. The properties of these In platelets are described and a formation model is proposed.


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