TITLE

Anomalous current–voltage characteristics and colossal electroresistance of amorphous carbon film on Si substrate

AUTHOR(S)
Xue, Q. Z.; Zhang, X.; Tian, P.; Jin, C.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4397
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous carbon film (a-C film) was deposited on n-Si substrate by pulsed-laser deposition at room temperature. The electrical transport properties of a-C film/n-Si were investigated by current–voltage (I–V) measurements at various temperatures. The results indicate that the resistance of a-C film/n-Si is controlled by the applied electric current. The most important result is that when the value of the electric voltage is larger than a threshold, the current increases abruptly to a very large value, and the value of the voltage threshold decreases with increasing temperature. Correspondingly, the colossal electroresistance (ER) was achieved in the temperature range measured. The ER reaches -84.5% and -99.5% at T=310 K and 170 K, respectively. The mechanism of the I–V characteristics may be understood by an energy band structure of a-C film/n-Si. The anomalous I–V characteristics and colossal ER should be of interest for various applications such as field-effect devices.
ACCESSION #
14974967

 

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