TITLE

GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition

AUTHOR(S)
Jizhi Zhang; Lau, Kei May
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4415
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs Esaki junctions were grown at normal growth temperatures above 550 °C by low pressure metalorganic chemical vapor deposition. The n sides of these junctions were heavily doped with silane into the regime that impurities were autocompensated. Consequently, zero-bias tunnel resistance was significantly reduced. We obtained a low zero-bias specific tunnel resistance of 9.6×10-5 Ω cm2 with an optimized silane flow rate.
ACCESSION #
14974962

 

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