High-power-density fault-current limiting devices using superconducting YBa2Cu3O7 films and high-resistivity alloy shunt layers

Yamasaki, Hirofumi; Furuse, Mitsuho; Nakagawa, Yoshihiko
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4427
Academic Journal
Switching of superconducting thin-film resistive fault-current limiting devices with alloy shunt layers was studied. Au–Ag alloy thin films, whose room-temperature resistivity is about six times higher than that of pure gold, were sputter deposited on YBa2Cu3O7 films on sapphire substrates with high critical current density of Jc=3.05±0.05 MA/cm2. A small sample, 5 mm wide and 40 mm long, had the capacity of a rated current of 32 Arms in normal operation and withstood a high voltage of 107 Vrms for 0.1 s after switching, resulting in a very high switching power density of ∼1.7 kVA/cm2, which is more than four times higher than conventional devices using gold shunt layers.


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