Five-day-long ferroelectric memory effect in Pt/(Bi,La)4Ti3O12/HfO2/Si structures

Byung-Eun Park; Takahashi, Kazuhiro; Ishiwara, Hiroshi
November 2004
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4448
Academic Journal
In order to form metal–ferroelectric–semiconductor–insulator–semiconductor (MFIS) structures, hafnium oxide (HfO2) films were first deposited on Si(100) substrates at room temperature using an electron-beam evaporation method. Then, they were annealed in an O2 atmosphere at 800 °C for 1 min. No hysteretic characteristics were observed in the capacitance–voltage (C–V) measurement for the metal–insulator–semiconductor capacitors. On these films, lanthanum-substituted bismuth titanate [(Bi,La)4 Ti3O12:BLT] films with 380 nm in thickness were deposited by a sol–gel spin-coating method and annealed in an O2 atmosphere at 750 °C for 30 min. The MFIS sample showed the hysteretic C–V characteristics and the memory window width was about 0.9 V for the voltage sweep of ±7 V. Furthermore, the high and low capacitance values biased in the hysteresis loop were clearly distinguishable for over 5 days. The origin of the excellent data retention characteristics is discussed from a viewpoint of the transient current across the film.


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