TITLE

High tunability barium strontium titanate thin films for rf circuit applications

AUTHOR(S)
Pervez, N. K.; Hansen, P. J.; York, R. A.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4451
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have been obtained through optimization of growth conditions for maximum dielectric strength and zero-field permittivity in a parallel-plate capacitor structure. Using nominal target compositions of Ba0.5Sr0.5TiO3, and Pt electrodes on c-plane sapphire substrates, adjustment of the O2 partial pressure during deposition was used to vary the excess Ti incorporation into the films, which influenced the low-field permittivity, loss tangent, and dielectric strength. By balancing the benefits of a high permittivity with dielectric strength and loss, we have produced films capable of sustaining short-duration fields greater than 4 MV/cm with over 13:1 (>90%) change in dielectric constant, and greater than 5:1 tunability in bias fields under 1 MV/cm.
ACCESSION #
14974951

 

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