TITLE

Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon

AUTHOR(S)
Istratov, A. A.; Huber, W.; Weber, E. R.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4472
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Experimental evidence is provided that gettering of iron by polycrystalline silicon (polysilicon) is driven by a combination of two gettering mechanisms, segregation and relaxation. The segregation coefficient of iron in polysilicon in samples annealed at temperatures between 1020 and 1175 °C varied from approximately 16 to 2. The efficiency of relaxation gettering by polysilicon was characterized using Ham’s model of diffusion-limited gettering. The product nr0 for the 11-μm-thick polysilicon layer was estimated as 106 cm-2.
ACCESSION #
14974944

 

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