TITLE

Characterization of field-electron emission from carbon nanofibers grown on Pd wire

AUTHOR(S)
Kita, S.; Sakai, Y.; Fukushima, T.; Mizuta, Y.; Ogawa, A.; Senda, S.; Okuyama, F.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4478
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Field-electron emission from carbon nanofibers (CNFs) on Pd wires of 50 μm in diameter was extensively studied in ultrahigh vacuum ambience by measuring current–voltage curves and stability over time. The CNFs, grown by plasma-enhanced chemical vapor deposition, were aligned perpendicular to the wire and were topped with a faceted single crystal of Pd. The emission from the CNFs was characterized by remarkable stability over a long time (600 h), and exhibited a maximum current of I=1.3 mA. The maximum current corresponds to a current density of J≅0.6 A/cm2 when estimated considering only the geometrical emitting area.
ACCESSION #
14974942

 

Related Articles

  • Fractal growth of sp3-bonded 5H-BN microcones by plasma-assisted laser chemical vapor deposition. Komatsu, Shojiro; Kazami, Daisuke; Tanaka, Hironori; Moriyoshi, Yusuke; Shiratani, Masaharu; Okada, Katsuyuki // Journal of Applied Physics;6/15/2006, Vol. 99 Issue 12, p123512 

    It was reported previously that sp3-bonded 5H-BN films grown by plasma-assisted laser chemical vapor deposition (PAL-CVD) exhibited cone-shaped units with dimensions on the order of ∼10 μm prevailing over the surface, and which contributed to excellent electron field emission properties....

  • Power dependence of NF3 plasma stability for in situ chamber cleaning. Bing Ji, Eugene J.; Elder, Delwin L.; Yang, James H.; Badowski, Peter R.; Karwacki, Eugene J. // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p4446 

    We investigated the stability of NF3 plasmas for in situ chamber cleaning in a production plasma-enhanced chemical vapor deposition reactor. An rf power threshold, normalized by NF3 molar number (Pnn) and NF3 flow rate (Pnf), is observed to be PnnPnf=39 (W/μ mol)(W/sccm) for stable plasmas...

  • New plasma-assisted deposition technique using helicon activated reactive evaporation. Durandet, Antoine; Boswell, Rod; McKenzie, David // Review of Scientific Instruments;Apr95, Vol. 66 Issue 4, p2908 

    Focuses on a plasma-assisted deposition technique using helicon activated reactive evaporation that combines an evaporation source and a high density plasma source. Silica deposition rate of yielded by evaporating silicon into an oxygen plasma; Operation of electron beam in conjunction with the...

  • Highly efficient electron field emission from decorated multiwalled carbon nanotube films. Sveningsson, M.; Morjan, R. E.; Nerushev, O. A.; Campbell, Eleanor E.B.; Malsch, D.; Schaefer, J. A. // Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4487 

    The field emission properties of films of aligned multiwalled nanotubes produced by plasma-enhanced chemical vapor deposition are studied as a function of their length. The measured turn-on and threshold electric fields decrease strongly with increasing nanotube length, reaching values of below...

  • Electron emission from disordered tetrahedral carbon. Weiss, B.L.; Badzian, A. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p794 

    Presents electron field-emission tests on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. Addition of nitrogen and oxygen ions during the growth stage; Presence of a disordered tetrahedral carbon structure; Disturbance in the lattice cubic symmetry;...

  • Deposition of n-type diamondlike carbon by using the layer-by-layer technique and its electron.... Kyu Chang Park; Jong Hyun Moon // Applied Physics Letters;3/17/1997, Vol. 70 Issue 11, p1381 

    Examines the electron emission of diamondlike carbon (DLC) films through plasma enhanced chemical vapor deposition. Correlation between electron emission and CF[sub 4] plasma exposure time; Estimates of the hydrogen content in DLC films; Factors influencing the shift of the Fermi level toward...

  • Crystalline SiGe films grown on Si substrates using laser-assisted plasma-enhanced chemical vapor deposition at low temperature. Lee, Ching-Ting; Cheng, Jun-Hung; Lee, Hsin-Ying // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p091920 

    Compared with conventional plasma-enhanced chemical vapor deposition, laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) can be used to deposit crystalline SiGe films on Si substrates at low temperature. In the LAPECVD system, a CO2 laser with a wavelength of 10.6 μm was...

  • Injection-level dependent surface recombination velocities at the silicon-plasma silicon nitride.... Aberle, Armin G.; Lauinger, Thomas // Applied Physics Letters;5/22/1995, Vol. 66 Issue 21, p2828 

    Examines the injection-level dependence of surface recombination velocity (S[sub eff] at p-silicon surfaces passivated by silicon nitride films. Fabrication of the film by plasma-enhanced chemical vapor deposition method; Measurement of S[sub eff] using photoconductance decay method;...

  • The influence of annealing (900°C) of ultra-thin PECVD silicon oxynitride layers. Mroczyński, Robert; Głuszko, Grzegorz; Beck, Romuald B.; Jakubowski, Andrzej; Ćwil, Michał; Konarski, Piotr; Hoffmann, Patrick; Schmeißer, Dieter // Journal of Telecommunications & Information Technology;2007, Vol. 2007 Issue 3, p16 

    This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high-temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics