TITLE

Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

AUTHOR(S)
Yan, B. P.; Hsu, C. C.; Wang, X. Q.; Yang, E. S.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities >10 A/cm2, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs.
ACCESSION #
14974933

 

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