TITLE

Low-resistance and high-reflectance Ni/Ag/Ru/Ni/Au ohmic contact on p-type GaN

AUTHOR(S)
Ho Won Jang; Jong-Lam Lee
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/8/2004, Vol. 85 Issue 19, p4421
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a metallization scheme of low-resistance, high-reflectance, and thermally-stable ohmic contact on p-type GaN. The specific contact resistivity as low as 5.2×10-5 Ω cm2 and the high reflectance of 91% were simultaneously obtained from Ni (50 Å)/Ag (1200 Å)/Ru (500 Å)/Ni (200 Å)/Au (500 Å) contact annealed at 500 °C in O2 ambient. The oxidation annealing promoted the outdiffusion of Ga atoms to dissolve in the Ag layer, leaving Ga vacancies below the contact. The Ru layer could act as a diffusion barrier for intermixing of the reflective Ag with upper layers of Ni and Au. Thus, suppression of the intermixing results in the high reflectance and good thermal stability of the contact.
ACCESSION #
14974920

 

Related Articles

  • Systematically convergent basis sets for transition metals. II. Pseudopotential-based correlation consistent basis sets for the group 11 (Cu, Ag, Au) and 12 (Zn, Cd, Hg) elements. Peterson, Kirk A.; Puzzarini, Cristina // Theoretical Chemistry Accounts: Theory, Computation, & Modeling;Oct2005, Vol. 114 Issue 4/5, p283 

    Sequences of basis sets that systematically converge towards the complete basis set (CBS) limit have been developed for the coinage metals (Cu, Ag, Au) and group 12 elements (Zn, Cd, Hg). These basis sets are based on recently published small-core relativistic pseudopotentials [Figgen D, Rauhut...

  • Formation of cadmium chlorides via cadmium dissolution in chloride melts. Kozin, V. F.; Omel'chuk, A. A. // Inorganic Materials;Jan2006, Vol. 42 Issue 1, p75 

    The kinetics and mechanism of the formation of complex Cd(I) ions via the reaction of metallic cadmium with Cd2+ ions in the Cd0-CdCl2-ZnCl2-NH4Cl system are studied spectroscopically. The formation of Cd and Cd is evidenced by absorption bands around 270 and 335 nm, respectively, in the...

  • Surface structures and electronic states of silicon nanotubes stabilized by oxygen atoms. Zhao, Mingwen; Zhang, R. Q.; Xia, Yueyuan // Journal of Applied Physics;7/15/2007, Vol. 102 Issue 2, p024313 

    The geometric and electronic structures of silicon nanotubes stabilized by incorporating oxygen atoms were studied using first-principles calculations within density functional theory. The predicted tubes present one-dimensional characters stacked with n-side silicon polygons connected by oxygen...

  • Unravelling the interplay of local structure and physical properties in phase-change materials. Wełnic, Wojciech; Pamungkas, Ariesto; Detemple, Ralf; Steimer, Christoph; Blügel, Stefan; Wuttig, Matthias // Nature Materials;Jan2006, Vol. 5 Issue 1, p56 

    As the chemical bonds in a covalent semiconductor are independent of long-range order, semiconductors generally have similar local arrangements not only in the crystalline, but also in the amorphous phase. In contrast, the compound Ge2Sb2Te5, which is a prototype phase-change material used in...

  • Atomic Data For Core And Edge Modeling. O’Mullane, M. G.; Foster, A. R.; Whiteford, A. D.; Summers, H. P.; Loch, S. D.; Lauro-Taroni, L. // AIP Conference Proceedings;9/10/2009, Vol. 1161 Issue 1, p43 

    Future magnetic fusion energy devices, will have both very high Z (tungsten) and low Z (beryllium) plasma facing components, are setting the agenda for current atomic data needs. Data for the light species are in good shape but the heavy species present some challenges. We outline an approach...

  • DISCOVERY OF THE ELEMENT WITH ATOMIC NUMBER 112.  // Pure & Applied Chemistry;Jul2009, Vol. 81 Issue 7, p1331 

    The IUPAC/IUPAP Joint Working Party (JWP) on the priority of claims to the discovery of new elements has reviewed the relevant literature pertaining to several claims. In accordance with the criteria for the discovery of elements previously established by the 1992 IUPAC/IUPAP Transfermium...

  • Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors. Mahadevan, Priya; Osorio-Guillén, J. M.; Zunger, Alex // Applied Physics Letters;4/25/2005, Vol. 86 Issue 17, p172504 

    While isovalent doping of GaAs (e.g., by In) leads to a repulsion between the solute atoms, two Cr, Mn, or Fe atoms in GaAs are found to have lower energy than the well-separated pair, and hence attract each other. The strong bonding interaction between levels with t2 symmetry on the transition...

  • Nitrogen vacancies at InN [formula] surfaces: A theoretical study. Terentjevs, A.; Catellani, A.; Cicero, G. // Applied Physics Letters;4/26/2010, Vol. 96 Issue 17, p171901 

    We present an ab initio atomistic study of the effects of nitrogen vacancies both in InN bulk and at [formula] nonpolar surface and confirm that these defects act as n-type impurities. Based on the dependence of the vacancy formation energy on the distance from the surface, we predict that at...

  • Atomically flat single-terminated SrTiO3 (111) surface. Jaewan Chang; Yoon-Seok Park; Sang-Koog Kim // Applied Physics Letters;4/14/2008, Vol. 92 Issue 15, p152910 

    The authors have reproducibly obtained an atomically well-defined SrTiO3 (111) surface by a combined chemical etching and thermal annealing process. Although thermodynamic mixed termination is preferred as a means of suppressing the surface dipole, the kinetics-driven etching process, via...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics