High-power and reliable operation of vertical light-emitting diodes on bulk GaN

Cao, X.A.; Arthur, S.D.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p3971
Academic Journal
InGaN/GaN light-emitting diodes (LEDs) with lateral and vertical geometries have been fabricated on free-standing GaN substrates. Current spreading was significantly enhanced in the vertical LED, leading to a reduced series resistance of 7 Ω compared to 12.2 and 14.2 Ω for the lateral LEDs on GaN and sapphire, respectively. As a result, the light output and power conversion efficiency of the vertical LED on GaN were greatly improved at high injection currents. The vertical LED was subjected to a stress test at 400 mA and showed minimal degradation of optical power, whereas the same stress resulted in the destruction of the lateral LED on sapphire due to increased current crowding and self-heating. However, lateral LEDs on sapphire with optimized current spreading exhibited excellent reliability, indicating the presence of a high density of dislocations (∼109 cm-2) in the heteroepitaxial device does not accelerate LED degradation at current densities up to 700 A/cm2.


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