InGaAs/AlAsSb quantum cascade lasers

Revin, D.G.; Wilson, L.R.; Zibik, E.A.; Green, R.P.; Cockburn, J.W.; Steer, M.J.; Airey, R.J.; Hopkinson, M.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p3992
Academic Journal
The In0.53Ga0.47As/AlAs0.56Sb0.44 heterostructure system is of significant interest for the development of high-performance intersubband devices due to its very large conduction band offset (ΔEc∼1.6 eV) and lattice-matched compatibility with well-established InP-based waveguide technology. In this letter, we report the realization of In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade lasers emitting at λ∼4.3 μm. The highest-performance devices have low-temperature (20 K) threshold currents of ∼6 kA/cm2 and display laser action up to a maximum temperature of 240 K, with a characteristic temperature of T0∼150 K.


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