TITLE

Elliptically polarized pump-probe spectroscopy and its application to observation of electron-spin relaxation in GaAs quantum wells

AUTHOR(S)
Tianshu Lai; Luning Liu; Qian Shou; Liang Lei; Weizhu Lin
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4040
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An elliptically polarized pump-probe spectroscopy is developed. A theoretical model is derived from the rate equations of two-level system with small signal approximation to describe the experimental signal of the spectroscopy. The spectroscopy eliminates the systematic errors between theories and experimental results in present circularly polarized pump-probe spectroscopy, and is implemented easily in experiments. The initial degree of spin polarization of carriers in an excited state can be extracted by means of the spectroscopy, which is an important parameter in the investigation of spatial transport of spin polarization. The electron-spin relaxation in GaAs quantum wells is studied by using this spectroscopy.
ACCESSION #
14945508

 

Related Articles

  • Carrier transport and recombination in resonantly excited InGaAs/GaAs MQWs. Aleksiejunas, Ramunas; Kadys, Arunas; Jarasiunas, Kestutis; Saas, Florian; Griebner, Uwe; Tomm, Jens W. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p461 

    We present nonlinear optical studies of the non-equilibrium carrier dynamics in InGaAs/GaAs quantum well structures. We exploit the free-carrier and electron spin-governed nonlinearities in pump-probe and four-wave mixing experiments to measure the carrier lifetime, spin relaxation time, and...

  • Photoreflectance study of hole-subband structures in GaAs/InxAl1-xAs strained-layer superlattices. Nakayama, Masaaki; Doguchi, Tomonori; Nishimura, Hitoshi // Journal of Applied Physics;9/15/1992, Vol. 72 Issue 6, p2372 

    Presents a study that performed photoreflectance measurements of the exciton transitions associated with gallium-arsenic strained-layer superlattices with gallium-arsenic substrates. Information on strained-layer superlattices and quantum wells; Use of photoreflectance spectroscopy; Theoretical...

  • Electronic transport studies of a systematic series of GaAs/AlGaAs quantum wells. Luhman, D. R.; Tsui, D. C.; Pfeiffer, L. N.; West, K. W. // Applied Physics Letters;8/13/2007, Vol. 91 Issue 7, p072104 

    The results of experimental transport studies involving a series of five narrow Al0.1Ga0.9As/GaAs quantum wells with well widths ranging from 7.9 to 33.0 nm are reported. The total transport scattering rate measured in thin AlGaAs/GaAs quantum wells is typically limited by electron scattering...

  • Effect of Screening by Two-Dimensional Charge Carriers on the Binding Energy of Excitonic States in GaAs/AlGaAs Quantum Wells. Gubarev, S. I.; Volkov, O. V.; Koval’skiı, V. A.; Kulakovskiı, D. V.; Kukushkin, I. V. // JETP Letters;11/10/2002, Vol. 76 Issue 9, p575 

    The spectrum of excitonic excited states in GaAs/AlGaAs quantum wells of different width is studied together with its change due to the screening of electron–hole interaction by two-dimensional electrons. The exciton binding energy decreases sharply with an increase in the concentration...

  • Subnanosecond far infrared photoconductivity from a GaAs/AlGaAs multiquantum well. de Bekker, R. E. M.; Chamberlain, J. M.; Claessen, L. M.; Wyder, P.; Stanaway, M. B.; Grimes, R. T.; Henini, M.; Hughes, O. H.; Hill, G. // Journal of Applied Physics;8/15/1990, Vol. 68 Issue 4, p1913 

    Presents a study that investigated the far infrared photoconductivity of gallium arsenide (GaAs)/AlGaAs multiquantum wells (MQW) doped with silicon. Information on the binding energy of an electron to a hydrogen like impurity in an MQW; Details of the continuous wave magnetospectroscopy...

  • Effect of Electron—Electron and Electron—Hole Collisions on Intraband Population Inversion of Electrons in Stepped Quantum Wells. Zerova, V. L.; Zegrya, G. G.; Vorob'ev, L. E. // Semiconductors;Sep2004, Vol. 38 Issue 9, p1053 

    The effect of intersubband electron–electron (e–e) and electron–hole (e–h) scattering on intraband population inversion of electrons in a stepped InGaAs/AlGaAs quantum well is investigated. The characteristic times of the most probable e–e and e–h...

  • Circular polarization from a nonmagnetic p-i-n resonant tunneling diode. de Carvalho, H. B.; Brasil, M. J. S. P.; Galvão Gobato, Y.; Marques, G. E.; Galeti, H. V. A.; Henini, M.; Hill, G. // Applied Physics Letters;2/5/2007, Vol. 90 Issue 6, p062120 

    The authors investigate the circular polarization of the electro- and photoluminescence emissions from the quantum well and contact layers of a nonmagnetic GaAs–AlAs p-i-n resonant tunneling diode under an external magnetic field. The contact emission evidences the formation of a spin...

  • Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells. Chen, J. F.; Hsiao, R. S.; Hsieh, P. C.; Wang, J. S.; Chi, J. Y. // Journal of Applied Physics;6/15/2006, Vol. 99 Issue 12, p123718 

    Effect of growth rate on the composition fluctuation is investigated in In0.34Ga0.66As0.98N0.02/GaAs single quantum wells (QWs) by photoluminescence (PL), transmission electron microscopy, and admittance spectroscopy. In an InGaAsN layer grown at a normal growth rate, the PL spectra show a...

  • All-optical analysis of carrier and spin relaxation in InGaAs/GaAs saturable-absorber structures. Aleksiejunas, Ramunas; Kadys, Arunas; Jarasiunas, Kestutis; Saas, Florian; Griebner, Uwe; Tomm, Jens W. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p102105 

    Results of an all-optical analysis of basic semiconductor parameters such as carrier mobilities, lifetimes, and electron spin relaxation time of implanted In0.25Ga0.75As/GaAs multiple quantum well saturable-absorber structures for the 1060 nm spectral range are presented. These parameters are...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics