Charge carrier transport in an emissive layer of green electrophosphorescent devices

Matsusue, Noriyuki; Ikame, Satoshi; Suzuki, Yuichiro; Naito, Hiroyoshi
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4046
Academic Journal
Charge carrier generation and transport in fac tris (2-phenylpyridine) iridium (III) (Ir(ppy)3) doped in 4,4′-N,N′-dicarbazole-biphenel (CBP) thin films have been studied in terms of time-of-flight and time-resolved photoluminescence spectroscopies. It is found that the excitation energy rapidly transfer from CBP to Ir(ppy)3, and that the charge carriers are generated on Ir(ppy)3 sites. With increasing Ir(ppy)3 concentration, the electron drift mobility is slightly decreased, while the hole transit signals become unobservable. The electron and hole transport properties of Ir(ppy)3 doped CBP thin films result from the energy levels of the lowest unoccupied molecular orbital and the highest occupied molecular orbital of Ir(ppy)3 with respect to those of CBP.


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