Thermal stability of electron traps in GaN grown by metalorganic chemical vapor deposition

Johnstone, D.; Do&gcaron;an, S.; Leach, J.; Moon, Y.T.; Fu, Y.; Hu, Y.; Morkoç, H.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4058
Academic Journal
Deep level transient spectroscopy was used to investigate the thermal stability of electron traps in n-type GaN grown by metalorganic chemical vapor deposition. The concentration of traps at 160 and at 500 K increased more than fivefold over the course of several 700 K anneal cycles, while a peak at 320 K increased by a factor of only 1.19. The increase in the trap concentration with repeated annealing might be due to a mobile trap or loss of passivant. Hydrogen is very likely present in high concentration in the epilayer, and its passivating effects may be lost with annealing.


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