Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

Macdonald, Daniel; Geerligs, L.J.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4061
Academic Journal
Interstitial iron in crystalline silicon has a much larger capture cross section for electrons than holes. According to the Shockley–Read–Hall model, the low-injection carrier lifetime in p-type silicon should therefore be much lower that in n-type silicon, while in high injection they should be equal. In this work we confirm this modeling using purposely iron-contaminated samples. A survey of other transition metal impurities in silicon reveals that those which tend to occupy interstitial sites at room temperature also have significantly larger capture cross sections for electrons. Since these are also the most probable metal point defects to occur during high temperature processing, using n-type wafers for devices such as solar cells may offer greater immunity to the effects of metal contaminants.


Related Articles

  • Characterization of multiple Si/SiO2 interfaces in silicon-on-insulator materials via second-harmonic generation. Jun, B.; White, Y. V.; Schrimpf, R. D.; Fleetwood, D. M.; Brunier, F.; Bresson, N.; Cristoloveanu, S.; Tolk, N. H. // Applied Physics Letters;10/11/2004, Vol. 85 Issue 15, p3095 

    Charge generation, transport, and recombination processes in UNIBOND® silicon-on-insulator wafers are studied via an optical second-harmonic generation (SHG) technique. The electric fields at the interfaces vary with time due to charge trapping. The presence of a thin native oxide layer on...

  • Optimization of multilayer porous silicon antireflection coatings for silicon solar cells. Selj, J. H.; Tho\gersen, A.; Foss, S. E.; Marstein, E. S. // Journal of Applied Physics;Apr2010, Vol. 107 Issue 7, p074904 

    Efficient antireflection coatings (ARC) improve the light collection and thereby increase the current output of solar cells. In this work, multilayered refractive index stacks optimized for antireflection, in bare air and within modules, are modeled. The relation between porous silicon (PS)...

  • The use of double sided silicon detector at the focal plane of VASSILISSA separator for registration of conversion electrons. Isaev, A. V.; Chepigin, V. I.; Chelnokov, M. L.; Kuznetzov, A. N.; Malyshev, O. N.; Popeko, A. G.; Svirikhin, A. I.; Yeremin, A. V.; Hauschild, K.; Lopez-Martens, A.; Dorvaux, O. // AIP Conference Proceedings;4/30/2010, Vol. 1224 Issue 1, p535 

    Performed work on the modernization of the detecting system of the separator VASSILISSA. In order to improve the efficiency of registration of conversion electrons were installed new DSSD, containing 48 strips on each side.

  • Subthreshold slope and transconductance degradation model in cycled hot electron injection programed/hot hole erased silicon-oxide-nitride-oxide-silicon memories. Daniel, Ramiz; Ruzin, Arie; Roizin, Yakov; Shaham-Diamand, Yossi // Journal of Applied Physics;Sep2008, Vol. 104 Issue 5, p054502 

    A physical model is presented for the subthreshold slope and transconductance degradation after program/erase cycling of silicon-oxide-nitride-oxide-silicon memory cells with thick bottom oxide, programed by hot electrons and erased by hot holes. Using a charge-pumping technique, it is shown...

  • Limitations of a simplified dangling bond recombination model for a-Si:H. Li, Tsu-Tsung Andrew; McIntosh, Keith R.; Cuevas, Andres // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113718 

    The validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon (a-Si:H) is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped...

  • A comprehensive study of hole collection in heterojunction solar cells. Crandall, Richard S.; Iwaniczko, Eugene; Li, Jian V.; Page, Mathew R. // Journal of Applied Physics;Nov2012, Vol. 112 Issue 9, p093713 

    We conduct a systematic investigation into the mechanism of hole collection in amorphous/crystalline silicon heterojunctions solar cells using transient-capacitance techniques. The devices are formed by depositing undoped amorphous silicon (i layer) followed by p-type amorphous silicon on n-type...

  • Enhanced charge separation in chlorophyll a solar cell by gold nanoparticles. Barazzouk, Saïd; Hotchandani, Surat // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7744 

    An efficient organic photoelectrochemical cell based on chlorophyll a (Chla) and gold nanoparticles is constructed. The enhanced performance of this cell is due to the beneficial role of gold nanoparticles in accepting and shuttling the photogenerated electrons in Chla to the collecting...

  • Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier. Persson, Clas; Zunger, Alex // Applied Physics Letters;11/21/2005, Vol. 87 Issue 21, p211904 

    First-principles calculations of model grain boundaries (GBs) in CuInSe2 and CaGaSe2 show that cation-terminated GBs have a valence-band offset with respect to the grain interior (GI). This offset repels holes from the GBs, thus depriving electrons there from recombination at the GB defects....

  • Effect of dislocation density on the efficiency of multicrystalline silicon solar cells. Benmohamed, Z.; Remram, M. // Materials Science (0137-1339);2007, Vol. 25 Issue 1, p243 

    The behaviour of structural defects is still one of the major problems in multicrystalline silicon. The properties of solar cells made from these materials are mainly determined by dislocations, grain boundaries and intragrain defect impurities such as oxygen and carbon. Interactions between...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics