Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n+ type doped GaAs

Chen, Y.S.; Wu, K.S.; Wang, D.P.; Huang, K.F.; Huang, T.C.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4064
Academic Journal
Electroreflectance of surface-intrinsic-n+ type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz–Keldysh oscillations (FKOs) above band gap energy Eg. The electric field F and critical point energy Ec can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain Ec as a function of F. In most of previous works, Ec is taken as Eg. However, it was found that Ec increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed.


Related Articles

  • Analytical Estimates of the Dispersion Curve in Planar Ionization Fronts. Arrayás, Manuel; Betelú, Santiago; Fontelos, Marco A.; Trueba, José L. // AIP Conference Proceedings;4/27/2009, Vol. 1118 Issue 1, p68 

    Fingers from ionization fronts for a hydrodynamic plasma model result from a balance between impact ionization and electron diffusion in a non-attaching gas. An analytical estimation of the size of the fingers and its dependence on both the electric field and electron diffusion coefficient can...

  • Phonon-Assisted Tunneling from Z1/ Z2 in 4H-SiC. Evwaraye, A. O. // Journal of Electronic Materials;Jun2010, Vol. 39 Issue 6, p751 

    n-Type 4H-SiC bulk samples with a net doping concentration of 2.5 � 1017 cm-3 were irradiated at room temperature with 1-MeV electrons. The high doping concentration plus a reverse bias of up to -13 V ensures high electric field in the depletion region. The dependence of the emission rate...

  • Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration. Chouaib, Houssam; Bru-Chevallier, Catherine // Applied Physics Letters;6/25/2007, Vol. 90 Issue 26, p262102 

    The authors present a microphotoreflectance (micro-PR) spectroscopic study of a biased InGaAlAs/GaAsSb/InP heterojunction bipolar transistor. Franz Keldysh oscillations from an InGaAlAs emitter are studied as a function of the static biasing voltage applied to the emitter-base junction. The...

  • Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells. Kudrawiec, R.; Yuen, H. B.; Bank, S. R.; Bae, H. P.; Wistey, M. A.; Harris, James S.; Motyka, M.; Misiewicz, J. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p113501 

    A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells (QWs) has been proposed in this paper. This approach utilizes contactless electroreflectance (CER) spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs...

  • Time-resolved photocurrent spectroscopy of the evolution of the electric field in optically excited superlattices and the prospects for Bloch gain. Lisauskas, Alvydas; Blöser, Claudia; Sachs, Robert; Roskos, Hartmut G.; Juozapavičius, Aušrius; Valušis, Gintaras; Köhler, Klaus // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p102103 

    We report on photocurrent spectroscopy on undoped GaAs/AlGaAs semiconductor superlattices subjected to femtosecond optical excitation. The evolution of the carrier-drift-induced inhomogeneity of the electric field is studied by tracing the shifting and broadening of Wannier–Stark...

  • Point defects introduced by InN alloying into InxGa1-xN probed using a monoenergetic positron beam. Uedono, A.; Tsutsui, T.; Watanabe, T.; Kimura, S.; Zhang, Y.; Lozac'h, M.; Sang, L. W.; Ishibashi, S.; Sumiya, M. // Journal of Applied Physics;Mar2013, Vol. 113 Issue 12, p123502 

    Native defects in InxGa1-xN (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for InxGa1-xN showed that vacancy-type...

  • Non-commutativity of space-time and the hydrogen atom spectrum. Chaichian, M.; Sheikh-Jabbari, M. M.; Tureanu, A. // European Physical Journal C -- Particles & Fields;Aug2004, Vol. 36 Issue 2, p251 

    There has been disagreement in the literature on whether the hydrogen atom spectrum receives any tree-level correction due to non-commutativity. Here we shall clarify this issue and show that indeed a general argument on the structure of the proton as a non-elementary particle leads to the...

  • Effect of Doping on the Structure and Raman Spectra of Bi4Ge3O12. Titorenkova, R.; Mihailova, B.; Petrova, R.; Gospodinov, M.; Konstantinov, L. // AIP Conference Proceedings;1/21/2010, Vol. 1203 Issue 1, p289 

    Single crystals of Bi4Ge3O12 (BGO) doped with Mn (concentration of 0.8×1018 cm-3), V (6.8×1018 cm-3), Co (0.1×1017 cm-3), and V+Co(4.8×1018+4.6×1017 cm-3) have been grown by the Czochralski method and studied by single-crystal X-ray diffraction and polarized Raman...

  • Measurement of fluctuation-induced particle fluxes in the shadow of the diaphragm of the FT-2 tokamak. Esipov, L. A.; Shishkin, V. N.; Shorikov, V. Yu.; Sakharov, I. E.; Chechik, E. O.; Shatalin, S. V. // Technical Physics;Apr97, Vol. 42 Issue 4, p367 

    Movable multielectrode probes are used in an experimental study of fluctuations in particle density and electric field, their spectral and correlation characteristics, and the poloidal�radial distributions of fluctuation-induced drift fluxes in the shadow of the diaphragm of the FT-2...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics