TITLE

Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n+ type doped GaAs

AUTHOR(S)
Chen, Y.S.; Wu, K.S.; Wang, D.P.; Huang, K.F.; Huang, T.C.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4064
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Electroreflectance of surface-intrinsic-n+ type doped GaAs has been measured over a various biased voltage. The spectra have exhibited many Franz–Keldysh oscillations (FKOs) above band gap energy Eg. The electric field F and critical point energy Ec can be determined from the slope and intercept of FKOs fitting. Hence, we can obtain Ec as a function of F. In most of previous works, Ec is taken as Eg. However, it was found that Ec increases with F in this work. In order to explain this, the gain of energy of electron and hole in F was discussed.
ACCESSION #
14945500

 

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