p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions

Bian, J.M.; Li, X.M.; Zhang, C.Y.; Yu, W.D.; Gao, X.D.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4070
Academic Journal
Nitrogen-doped p-type ZnO (ZnO:N) films have been achieved by ultrasonic spray pyrolysis at atmosphere. The high structural quality of the obtained films was confirmed by x-ray diffraction, scanning electron microscopy, and photoluminescence spectra. Hall-effect and Seebeck-effect measurements indicate that the obtained p-type ZnO film shows a low resistivity of 3.02×10-2 Ω cm, high carrier concentration of 8.59×1018 cm-3, high mobility of 24.1 cm2/V s, and high Seebeck coefficient of 408.2 μV/K at room temperature. Furthermore, the two-layer structured ZnO p–n homojunctions were prepared by depositing n-type ZnO layer on p-type ZnO:N layer. The current–voltage curve derived from the two-layer structure clearly shows the typical rectifying characteristic of p–n junctions.


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