TITLE

Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing

AUTHOR(S)
Cho, M.-H.; Chung, K.B.; Chang, H.S.; Moon, D.W.; Park, S.A.; Kim, Y.K.; Jeong, K.; Whang, C.N.; Lee, D.W.; Ko, D.-H.; Doh, S.J.; Lee, J.H.; Lee, N.I.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Interfacial reactions as a function of the stack structure of Al2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an Al2O3 film with a buffer layer of HfO2, reactions between the Al2O3 and Si layers were suppressed, while a HfO2 film with an Al2O3 buffer layer on the Si readily interacted with Si, forming a Hf–Al–Si–O compound. The thickness of the interfacial layer increased dramatically after an annealing treatment in which a buffer layer of Al2O3 was used, while no change in thickness was observed in the film in which a HfO2 buffer layer was used. Moreover, the stoichiometric change caused by a different reaction process altered the chemical state of the films, which affected charge trapping and the interfacial trap density.
ACCESSION #
14945483

 

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