Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Nan Wu; Qingchun Zhang; Chunxiang Zhu; Chan, D.S.H.; Li, M.F.; Balasubramanian, N.; Chin, Albert; Dim-Lee Kwong
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4127
Academic Journal
An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface SiH4 annealing was implemented prior to HfO2 deposition. X-ray photoelectron spectroscopy analysis results show that the SiH4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Å and a leakage current of 1.16×10-5 A/cm2 at 1 V gate bias was achieved for TaN/HfO2/Ge MOS capacitors with the SiH4 surface treatment.


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