Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Masahara, Meishoku; Hosokawa, Shinichi; Matsukawa, Takashi; Endo, Kazuhiko; Naitou, Yuuichi; Tanoue, Hisao; Suzuki, Eiichi
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4139
Academic Journal
Nanometer-scale dopant profiling in the vertical ultrathin channels (UTCs) of double-gate metal–oxide–semiconductor field-effect transistors has been performed by using scanning nonlinear dielectric microscopy. UTCs 18–58 nm thick and 175 nm high were formed on a bulk silicon substrate by orientation-dependent wet etching. An n+/p junction was fabricated on the top of the UTC by angled ion implantation. By beveling the UTC with an ultragentle angle, the vertical size of the UTC was amplified by a factor of 86. Using the beveled samples, the channel thickness dependence of the dopant depth profile in the UTC was quantitatively investigated. It was found that a significant dopant loss occurs when the channel thickness is reduced to 18 nm.


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