Multispectral operation of self-assembled InGaAs quantum-dot infrared photodetectors

Kim, Seongsin M.; Harris, James S.
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4154
Academic Journal
We report two-color InGaAs quantum-dot infrared photodetectors. The InGaAs self-assembled quantum dots were grown on InGaP matrix via metalorganic chemical vapor deposition and fabricated as intersubband photoconductive structure. Bias controlled two-color photoconductive responses were obtained at two different infrared window, mid-infrared (IR) of λ=5.5 μm and far-IR of λ=9.2 μm at 77 K. Our devices were operated with low dark currents and high optical gains, and resulted in peak detectivity, D*, of 4.7×109 cm Hz1/2/W at λ=5.5 μm with bias of -2.0 V, and 7.2×108 cm Hz1/2/W at λ=9.2 μm with bias of -0.8 V.


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