Power broadening of the exciton linewidth in a single InGaAs/GaAs quantum dot

Stufler, Stefan; Ester, Patrick; Zrenner, Artur; Bichler, Max
November 2004
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4202
Academic Journal
We use high-resolution photocurrent spectroscopy to investigate the ground state of a single quantum dot. In the limit of low optical excitation power, we observe a ground state linewidth down to 4 μeV. With increasing excitation intensities, the linewidth shows a characteristic power broadening. This effect is a direct consequence of the saturation of the absorption in a two-level system under conditions of high excitation intensities. From a comparison of both effects, we conclude that power-dependent dephasing is negligible in our system.


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