TITLE

A quantitative study of the relationship between the oxide charge trapping over the drain extension and the off-state drain leakage current

AUTHOR(S)
Jiayi Huang; Chen, T.P.; Ang, C.H.; Manju, S.; Fung, S.
PUB. DATE
November 2004
SOURCE
Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4211
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, we report an approach to quantitative study of the relationship between the oxide charge trapping over the drain extension due to electrical stress and the off-state drain leakage current. It is found that positive charge trapping over the drain extension leads to a significant increase in the off-state drain current if the edge direct tunneling (EDT) is dominant in the drain current but in contrast, it leads to a reduction in the drain current if the band-to-band tunneling in the Si surface is dominant. A quantitative relationship between the charge trapping and the off-state drain leakage current in the EDT regime is established. From the measurement of the off-state current in the EDT regime, the charge trapping can be determined by using the approach developed in this study.
ACCESSION #
14945451

 

Related Articles

  • Current measurement by real-time counting of single electrons. Bylander, Jonas; Duty, Tim; Delsing, Per // Nature;3/17/2005, Vol. 434 Issue 7031, p361 

    The fact that electrical current is carried by individual charges has been known for over 100 years, yet this discreteness has not been directly observed so far. Almost all current measurements involve measuring the voltage drop across a resistor, using Ohm's law, in which the discrete nature of...

  • Electron Tunnel Current through HfO2/SiO2 Nanometer-thick Layers with a Trapped Charge: Effects of Electron Incident Angle and Silicon Substrate Orientation. Noor, Fatimah A.; Sahdan, Muhammad F.; Achmari, Panji; Iskandar, Ferry; Abdullah, Mikrajuddin; Khairurrijal // AIP Conference Proceedings;12/10/2011, Vol. 1415 Issue 1, p32 

    A model for describing the electron transmittance and tunneling current in anisotropic MOS devices with a high-k dielectric stack is studied by including the off-diagonal effective-mass tensor elements and the effect of coupling between transverse and longitudinal energies. The HfO2/SiO2 dual...

  • The effect of coulomb correlations on the nonequilibrium charge redistribution tuned by the tunneling current. Arseev, P.; Maslova, N.; Mantsevich, V. // Journal of Experimental & Theoretical Physics;Jul2012, Vol. 115 Issue 1, p141 

    We demonstrate that the tunneling current flowing through a system with Coulomb correlations leads to a charge redistribution between the different localized states. A simple model consisting of two electron levels is analyzed by means of the Heisenberg equations of motion taking correlations of...

  • Kinetics of current formation in a molecular diode. Petrov, E. G.; Leonov, V. A.; Shevchenko, Ye. V. // Low Temperature Physics;May2012, Vol. 38 Issue 5, p428 

    Using the kinetic theory of electron transport in low-dimensional molecular systems, the establishment of transient and stationary currents in a system 'electrode l-molecule-electrode 2' (molecular diode) is studied at different regimes of charge transmission. Within the framework of the...

  • Designing resonant tunneling structures for increased peak current density. Wie, C.R.; Choi, Y.W. // Applied Physics Letters;3/11/1991, Vol. 58 Issue 10, p1077 

    Examines a method to increase the peak current density in a double-barrier resonant tunneling structure by using a small band-gap emitter space layer. Systematic increase in the peak current density by increasing indium content in the structures; Peak voltage and peak-to-valley ratio...

  • Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy. Ebert, Ph.; Domke, C.; Urban, K. // Applied Physics Letters;1/22/2001, Vol. 78 Issue 4, p480 

    We demonstrate the possibility of simultaneous determination of the type and electrical charge state of dislocations in GaAs by cross-sectional scanning tunneling microscopy (STM). The methodology is demonstrated for a dissociated perfect dislocation in highly Si-doped GaAs(110) surfaces. The...

  • Optimization of charge sensitivity of a single electron tunneling transistor with a superconducting grain. Hanke, Ulrik; Chao, K. A.; Galperin, Yu. M. // Journal of Applied Physics;7/15/1996, Vol. 80 Issue 2, p1245 

    Focuses on a study which calculated the charge sensitivity of a capacitive-coupled double-junction single electron tunneling transistor (SETT). Background on the sensitivity of a SETT; Information on a superconducting metallic grain; Significance of the study.

  • Current transport mechanism in trapped oxides: A generalized trap-assisted tunneling model. Houng, Mau Phon; Wang, Yeong Her // Journal of Applied Physics;8/1/1999, Vol. 86 Issue 3, p1488 

    Presents information on a study which described a generalized trap-assisted tunneling (TAT) model used for solving some of the problems met with the conventional TAT model. Improvement of the TAT model; Results and discussion; Conclusions.

  • Delocalized electronic behavior observed in transition metal oxide clusters under strong-field excitation. Sayres, Scott G.; Ross, Matt W.; Castleman, A. W. // Journal of Chemical Physics;8/7/2011, Vol. 135 Issue 5, p054312 

    Heterogeneously composed clusters are exposed to intensity resolved, 100 fs laser pulses to reveal the energy requirements for the production of the high charge states of both metal and nonmetal ions. The ionization and fragmentation of group V transition metal oxide clusters are here examined...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics