Terahertz emission from electrically pumped gallium doped silicon devices

Lv, P.-C.; Troeger, R. T.; Kim, S.; Ray, S. K.; Goossen, K. W.; Kolodzey, J.; Yassievich, I. N.; Odnoblyudov, M. A.; Kagan, M. S.
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3660
Academic Journal
Current pumped terahertz (THz) emitting devices have been fabricated from gallium doped silicon. The time resolved peak power was 12 μW per facet at a peak pumping current of 400 mA, and the emission was observed up to temperatures near 30 K. The spectra occurred in two distinct series at 7.9–8.5 THz, and at 13.2–13.8 THz. The emission was attributed to the radiative transitions of holes from the split sublevels of the 1Γ8 excited state to the sublevels of the 1Γ8+ ground state and the 1Γ7+ ground state, yielding an energy separation of 22±0.07 meV between the two ground states. These results indicated that emitters based on Ga impurity transitions open up a range of THz frequencies, and the properties of their spectra can improve the understanding of impurity level physics.


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