TITLE

White-light generation through ultraviolet-emitting diode and white-emitting phosphor

AUTHOR(S)
Kim, Jong Su; Jeon, Pyung Eun; Park, Yun Hyung; Choi, Jun Chul; Park, Hong Lee; Kim, Gwang Chul; Kim, Tae Whan
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3696
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
White-light-emitting diodes are fabricated by using 375 nm emitting InGaN chip with Sr3MgSi2O8:Eu2+ (blue and yellow) or Sr3MgSi2O8:Eu2+, Mn2+ (blue, yellow, and red). At a color temperature of 5892 K, the color coordinates are x=0.32, y=0.33, and the color rendering index is 84%; at a color temperature of 4494 K, the color coordinates are x=0.35, y=0.33, and the color rendering index is 92%. The blue (470 nm) and yellow (570 nm) emission bands are originated from Eu2+ ions, while the red (680) emission band is originated from Mn2+ ions in Sr3MgSi2O8 host. The energy transfer among three bands occurs due to the spectral overlap between emission and absorption bands. It is confirmed by the faster decay time of the energy donor. Our white-light-emitting diodes show higher color reproducibility, higher color stability on forward-bias current, and excellent color rendering index in comparison with a commercial YAG:Ce3+-based white-light-emitting diode.
ACCESSION #
14909859

 

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