Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Miskys, C. R.; Garrido, J. A.; Hermann, M.; Eickhoff, M.; Nebel, C. E.; Stutzmann, M.; Vogg, G.
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3699
Academic Journal
Two practically fully relaxed AlN domains were identilied by x-ray diffractometry for AlN grown on (100) diamond. The epitaxial orientation relationships (0001)[1010] AlNI¦¦ (100)[011] diamond for the predominant AlN domain (type I) and (0001)[1210] AlNII (100)[011] diamond for the second domain (type II) are obtained. Surface morphology measurements corroborate the good structural quality of the AlN film. In addition, the intrinsic built-in voltage of a n-AlN/p-diamond diode was determined as 1.15 V. By spectrally resolved photocurrent measurements, the ultraviolet electroluminescence emission was conlirmed to originate at the heterojunction interface, and is most probably due to a defect center.


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