TITLE

Theoretical optimization of the self-organized growth of nanoscale arrays through a figure of merit

AUTHOR(S)
Vasco, E.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3714
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A figure of merit is proposed in order to optimize the self-organized growth of nanoscale elements into one-/two-dimensional arrays via a fine selection of the deposition/annealing conditions. This figure of merit has been designed to account for the most significant defects inherent in such arrays. Its versatility has been studied by kinetic Monte Carlo simulations of self-organized growth of metal clusters on the 7×7 reconstructed Si(111) surface. The optimization relationships between deposition/annealing conditions and characteristics of the metal-on-Si(111)7×7 systems are obtained and analyzed within the framework of competition between thermodynamical tendencies and kinetic limitations.
ACCESSION #
14909853

 

Related Articles

  • Silicon epitaxial growth on the Si(001)2×1 surface from silane using dynamic Monte Carlo simulations. Satake, Koji; Graves, David B. // Journal of Chemical Physics;4/8/2003, Vol. 118 Issue 14, p6503 

    Dynamic Monte Carlo (DMC) simulations are carried out on silicon (001)2×1 surface under 100% silane gas chemical vapor deposition condition as a function of surface temperature (600-800 °C) and pressure (6 and 12 mTorr). The reactant on the surface from gas-phase is assumed to be the...

  • Monte Carlo simulation of laser induced chemical vapor deposition. Zeiri, Yehuda; Atzmony, Uzi; Bloch, Joseph; Lucchese, Robert R. // Journal of Applied Physics;4/1/1991, Vol. 69 Issue 7, p4110 

    Focuses on a study concerning the application of Monte Carlo simulation laser on chemical vapor deposition processes. Effect of laser beam photodissociates on parent organometallic molecules; Process of organometallic decomposition; Discussion of the deposition kinetics of chemical vapor.

  • Monte Carlo simulation for dissociation of hydrogen during electron assisted chemical vapor deposition of diamond. Saitoh, Hidetoshi; Mima, Hiroyuki; Ishiguro, Takashi; Ichinose, Yukio // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p7002 

    Provides information on a study which described an H[sub2] dissociation model in the diamond deposition process using the results of a Monte Carlo computer simulation. Association of molecular hydrogen in the model; Advantage of the development of gas phase analysis techniques; Generation of...

  • A real time Monte Carlo simulation of thin film nucleation in localized-laser chemical vapor deposition. Kotecki, David E.; Herman, Irving P. // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p4920 

    Presents information on a study which examined the nucleation and initial stages of thin film growth during localized-laser chemical vapor deposition using the Monte Carlo simulation. Features of nucleation kinetics; Role of dimer migrations; Adatom binding energies and migration barrier heights.

  • Time dependent Monte Carlo simulations of H reactions on the diamond {001}(2×1) surface under chemical vapor deposition conditions. Dawnkaski, E. J.; Srivastava, D.; Garrison, B. J. // Journal of Chemical Physics;6/15/1995, Vol. 102 Issue 23, p9401 

    Time dependent Monte Carlo (TDMC) simulations are performed to determine the effects of a variety of H reactions at a diamond {001}(2×1) surface exposed to gaseous atomic and molecular hydrogen under chemical vapor deposition conditions. The simulation time in the TDMC method is the same as...

  • Chemical vapor deposition diamond based multilayered radiation detector: Physical analysis of detection properties. Almaviva, S.; Marinelli, Marco; Milani, E.; Prestopino, G.; Tucciarone, A.; Verona, C.; Verona-Rinati, G.; Angelone, M.; Pillon, M.; Dolbnya, I.; Sawhney, K.; Tartoni, N. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p014511 

    Recently, solid state photovoltaic Schottky diodes, able to detect ionizing radiation, in particular, x-ray and ultraviolet radiation, have been developed at the University of Rome “Tor Vergata.” We report on a physical and electrical properties analysis of the device and a detailed...

  • Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon. Huizing, H. G. A.; Visser, C. C. G.; Cowern, N. E. B.; Stolk, P. A.; de Kruif, R. C. M. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1211 

    The injection of interstitials during annealing of nonamorphizing Si implants has been monitored by means of sharp boron-doped marker layers grown by reduced pressure chemical vapor deposition. The boron diffusivity enhancement measured during the initial annealing stages (t<15 s) at 700 °C...

  • Undoped semi-insulating GaAs epitaxial layers and their characterization. Imaizumi, T.; Okazaki, H.; Yamamoto, H.; Oda, O. // Journal of Applied Physics;12/15/1994, Vol. 76 Issue 12, p7957 

    Presents a study which applied wafer annealing to undoped conductive GaAs epitaxial layers grown by the chloride chemical vapor deposition method in order to realize semi-insulating GaAs epitaxial layers. Methods; Annealing conditions and electrical properties; Results and discussion.

  • Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition. Cheong, M. G.; Kim, K. S.; Kim, C. S.; Choi, R. J.; Yoon, H. S.; Namgung, N. W.; Suh, E.-K.; Lee, H. J. // Applied Physics Letters;2/11/2002, Vol. 80 Issue 6, p1001 

    P-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentration. Temperature-dependent Hall effects show...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics