Blue emission from CaS:Cu,F thin-film electroluminescent device fabricated on Si substrate

Hakamata, Shintaro; Ehara, Mami; Fukada, Haruki; Kominami, Hiroko; Nakanishi, Yoichiro; Hatanaka, Yoshinori
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3729
Academic Journal
Thin-film electroluminescent (TFEL) devices were fabricated on Si substrates by using SiO2 and Y2O3 films as insulator layers, and ZnS films as buffer layers. The device annealed at 850 °C for 10 min in Ar showed a purple EL with a peak at 425 nm. Commission Internationale de l’Eclairage (CIE) color coordinates of x=0.217, y=0.223 under driving at 220 V0-p of 1 kHz trapezoidal wave. The purple EL from CaS:Cu TFEL device could be achieved, although luminance was weak, and a little longer wavelength component was included.


Related Articles

  • Charge transport and filament formation in ZnS:Mn thin film structures. Meyer, K.; Raker, T.; Niedernostheide, F.-J.; Kuhn, T. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p331 

    The charge carrier dynamics and pattern formation in ac-driven ZnS:Mn thin-film electroluminescent devices is studied on the basis of a drift-diffusion approach. The hysteresis of the current-voltage characteristic and the properties of current filaments in the bistable region are analyzed for...

  • Direct imaging of carrier motion in organic transistors by optical second-harmonic generation. Manaka, Takaaki; Lim, Eunju; Tamura, Ryousuke; Iwamoto, Mitsumasa // Nature Photonics;Oct2007, Vol. 1 Issue 10, p581 

    Interest in the dynamic behaviour of carriers in organic materials is motivated by possible applications that include organic thin-film transistors, organic electro-luminescent devices and organic photoconductors. It can also provide an insight into the modelling of carrier transport and...

  • Silicone system choices abound for HB LED packaging. Riegler, Bill; Thomaser, Rob; Bruner, Steve // Laser Focus World;Nov2006, Vol. 42 Issue 11, p115 

    The article offers information about the polymer chemistry and structure of silicones for numerous high brightness light emitting diode packaging applications, such as die encapsulation, die-attach adhesive, and lens-type material. It includes information about the material composition and...

  • The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices. Lv, P.-C.; Zhang, X.; Kolodzey, J.; Odnoblyudov, M. A.; Yassievich, I. N. // Journal of Applied Physics;11/15/2005, Vol. 98 Issue 10, p103511 

    The effects of uniaxial compressive stress on the terahertz electroluminescence from P-doped silicon devices have been studied. A shift by ∼0.5 THz in the emission peaks of donor state transitions: 2p0→1s(E) and 3p+/-→1s(E) has been observed for a stress of ∼0.1 GPa along...

  • Electroluminescent lamps: Sharp answers to flat lighting. Schweher, Bill // EDN;02/18/99, Vol. 44 Issue 4, p48 

    Describes how electroluminescent lamps work. Use of electroluminescent lamps as backlighting for liquid crystal displays in pagers, cell phones, watches and control panels; Lighting sources for safety strips and highlighting; Even illumination of a flat area; History of electroluminescent...

  • New method of making sol-gel micropixels. Savage, Neil // Laser Focus World;Nov99, Vol. 35 Issue 11, p38 

    Discusses a method for making micropixels or organic light-emitting devices (OLED). Application of sol-gel technology in the construction of OLED; Information on the developer of the method; Advantages of the method.

  • Influence of boron doping and hydrogen dilution on p-type microcrystalline silicon carbide thin films prepared by photochemical vapor deposition. Ghosh, Sukriti; Dasgupta, Arup; Ray, Swati // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3200 

    Examines the effect of boron doping and hydrogen dilution on structural and opto-electronic properties of silicon carbide thin films. Means to increase the electrical conductivity of amorphous silicon carbide films; Role of ultraviolet radiation on silicon microcrystallites; Implication of...

  • Hot hole excitation of EuGa2S4 electroluminescent thin films. Tanaka, Katsu; Okamoto, Shinji // Applied Physics Letters;8/9/2004, Vol. 85 Issue 6, p923 

    This letter describes which carrier type (electrons or holes) is dominant for EuGa2S4 thin film electroluminescent (TFEL) excitation. The transient EL wave form was measured on the EuGa2S4 TFEL devices having a single insulating thin film, which emit pure green EL due to the 5d–4f...

  • Charge recombination electroluminescence in organic thin-film devices without charge injection from external electrodes. Tsutsui, Tetsuo; Sang-Bong Lee; Fujita, Katsuhiko // Applied Physics Letters;9/20/2004, Vol. 85 Issue 12, p2382 

    Organic thin-film electroluminescent (EL) devices with a double-insulated structure, Al electrode/polymer insulator layer/ambipolar EL layer/ITO nanoparticles layer/ambipolar EL layer/polymer insulator layer/ITO electrode, were fabricated. The ambipolar EL layer was the composition of poly...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics