Periodic precipitation of crystalline Ge nanoparticles in Ge–B–SiO2 thin glass films

Nishiyama, Hiroaki; Miyamoto, Isamu; Matsumoto, Shin-ichi; Saito, Mitsunori; Fukumi, Kohei; Kintaka, Kenji; Nishii, Junji
October 2004
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3734
Academic Journal
Crystalline 20- to 40-nm-diam Ge nanoparticles were precipitated periodically in Ge–B–SiO2 thin glass films fabricated by the plasma-enhanced chemical vapor deposition method. Such a periodic structure was created by exposure to an interference pattern with a KrF excimer laser (248 nm wavelength) and successive annealing at 600°C. Nanoparticles were precipitated predominantly in the unirradiated region after photoinduced refractive index change was erased completely after annealing up to 500°C.


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