TITLE

Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons

AUTHOR(S)
Shkolnikov, Y. P.; Vakili, K.; De Poortere, E. P.; Shayegan, M.
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3766
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample’s fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer.
ACCESSION #
14909835

 

Related Articles

  • Intersubband-coupling and screening effects on the electron subband mobility in a GaAs/InxGa1-xAs delta-doped double quantum well system. Sahu, T. // Journal of Applied Physics;11/15/2004, Vol. 96 Issue 10, p5576 

    We study low temperature electron transport mobility μn in a GaAs/InxGa1-xAs double quantum well structure. Both the extreme barriers are δ doped with Si so that the electrons diffuse into the adjacent wells (InGaAs layers) forming two sheets of two-dimensional electron gas separated by a...

  • Electron-Forbidden Energy Gap of Hydrogen in a Wide Pressure Interval. Khrapak, A. G.; Yoshino, K. // Journal of Experimental & Theoretical Physics;Jan2005, Vol. 100 Issue 1, p14 

    A simple model is used for estimating the bottom energy of the electron conduction band and the electron-forbidden gap energy. It is shown that electrons in liquid hydrogen are localized not in electron bubbles, as was considered previously, but in molecular negative ions surrounded by voids...

  • Extremely high electron mobility of pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum wells grown on (411)A InP substrates by molecular-beam epitaxy. Kitada, T.; Aoki, T.; Watanabe, I.; Shimomura, S.; Hiyamizu, S. // Applied Physics Letters;11/1/2004, Vol. 85 Issue 18, p4043 

    Much enhanced electron mobility of 105 000 cm2/V s with a high sheet electron concentration (Ns) of 3.1×1012 cm-12 was obtained at 77 K in pseudomorphic In0.74Ga0.26As/In0.46Al0.54As modulation-doped quantum well (MD-QW) grown on a (411)A InP substrate by molecular-beam epitaxy. This MD-QW...

  • Microwave photoresistance of a two-dimensional electron gas in a ballistic microbar. Bykov, A. A. // JETP Letters;Aug2009, Vol. 89 Issue 11, p575 

    The effect of millimeter microwave radiation on the electron transport of two-dimensional (2D) ballistic microbars formed on the basis of individual GaAs quantum wells at a temperature of T = 4.2 K in magnetic fields B < 0.6 T has been investigated. Differences have been revealed in the magnetic...

  • Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis. O'Leary, Stephen K.; Foutz, Brian E.; Shur, Michael S.; Eastman, Lester F. // Applied Physics Letters;11/28/2005, Vol. 87 Issue 22, p222103 

    Recent experimentation, performed on bulk wurtzite InN, suggests that the energy gap, the effective mass of the electrons in the lowest-energy valley, and the nonparabolicity coefficient of the lowest-energy valley are not as originally believed for this material. Using a semiclassical...

  • Effects of subconduction band excitations on thermal conductance at metal-metal interfaces. Hopkins, Patrick E.; Beechem, Thomas E.; Duda, John C.; Smoyer, Justin L.; Norris, Pamela M. // Applied Physics Letters;1/4/2010, Vol. 96 Issue 1, p011907 

    Increased power densities combined with the decreased length scales of nanosystems give rise to large thermal excitations that can drastically affect the electron population near the Fermi surface. In light of such conditions, a model is developed for electron thermal boundary conductance (eTBC)...

  • Study of fast-electron transport in laser-illuminated spherical targets. Yaakobi, B.; Gotchev, O. V.; Betti, R.; Stoeckl, C. // Physics of Plasmas;Oct2009, Vol. 16 Issue 10, p102703 

    The transport and scattering of fast electrons created by the two-plasmon-decay instability are studied by comparing the hard x-ray signal from two identically irradiated targets: a 1-mm-diam solid Cu sphere and a 1-mm-diam solid CH sphere, both coated with a 15 μm layer of CH. Comparing the...

  • Electron energy band alignment at the (100)Si/MgO interface. Afanas'ev, V. V.; Stesmans, A.; Cherkaoui, K.; Hurley, P. K. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p052103 

    The electron energy band diagram at the (100)Si/MgO interface is characterized using internal photoemission of electrons and holes from Si into the oxide. For the as-deposited amorphous MgO the interface barriers correspond to a band gap width of 6.1 eV, i.e., much lower than the conventionally...

  • Large impact of strontium substitution on photocatalytic water splitting activity of BaSnO3. Yuan, Yupeng; Lv, Jun; Jiang, Xiaojun; Li, Zhaosheng; Yu, Tao; Zou, Zhigang; Ye, Jinhua // Applied Physics Letters;8/27/2007, Vol. 91 Issue 9, p094107 

    The effects of Sr substitution for Ba on photocatalytic water splitting activity of BaSnO3 were investigated experimentally and theoretically. The chemical incorporation of Sr into BaSnO3 induced a great enhancement for H2 production. Density function theory calculations of Ba1-xSrxSnO3 (x=0,...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics