TITLE

Nitric acid oxidation of silicon at ∼120 °C to form 3.5-nm SiO2/Si structure with good electrical characteristics

AUTHOR(S)
Asuha; Imai, Shigeki; Takahashi, Masao; Kobayashi, Hikaru
PUB. DATE
October 2004
SOURCE
Applied Physics Letters;10/25/2004, Vol. 85 Issue 17, p3783
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
3.5-nm-thick SiO2 layers can be formed at 120 °C by immersion of Si in 40 wt % nitric acid (HNO3) followed by immersion in an azeotropic mixture (i.e., 68 wt % HNO3). The former immersion produces a 1.1-nm SiO2 layer with a low atomic density of 2.19×1022/cm2, where the layer acts as a catalyst for the decomposition of HNO3. The latter immersion results in a 3.5-nm SiO2 layer with a higher atomic density of 2.22×1022/cm2. When the postmetalization annealing treatment at 250 °C in hydrogen is performed on the 〈Al/3.5-nm SiO2/Si(100)〉 metal-oxide semiconductor diodes, interface states are passivated and a low leakage current density (e.g., 8×10-4 A/cm2 at the forward gate bias of 1.5 V) is achieved.
ACCESSION #
14909829

 

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